Atmospheric pressure vapor phase epitaxial growth system .

大气压汽相磊晶生长系统。

Moreover , gaas substrates removed by epitaxial lift-off technique are recyclable to save resource and prevent form waste .

而且，经由磊晶层剥离技术所移除的基板亦可以回收重覆使用，节省资源和成长的浪费。

Because of improved epitaxial growth and advanced process technology , the quantum efficiencies of gan-based leds are increased .

由於磊晶成长技术的成熟及相关制程的改善使得以氮化镓做为基材的发光二极体，量子效率大幅地提升。

Research interests : surface science ; semi-conductor physics , scanning tunneling microscopy , surface atomic and molecular dynamics ; mechanism of epitaxial growth .

研究兴趣：表面科学、半导体物理、扫描穿隧显微术、表面原子、分子动态学、磊晶成长机制。

In the two thin film samples , x-ray diffraction ( xrd ) measurements reveal the different epitaxial relationships between the zno film and the sapphire substrate with different growth temperatures .

在两个薄膜样品中，x光绕射结果显示不同的长晶温度会造成氧化锌薄膜和基板间不同的磊晶关系。