Growth and Characterization of Si-based Strain Relaxed SiGe Substrate and SiGe / Si Quantum Wells

Si基SiGe弛豫衬底及SiGe/Si量子阱生长与表征

It was shown that SiGe HBT had a better anti-radiation performance than Si BJT .

这说明SiGeHBT具有比SiBJT更好的抗辐照性能。

Simulation and Analysis of High-Frequency Characteristics of SiGe HBT \'s Based on Small-Signal Equivalent Circuit

基于小信号等效电路模型的SiGeHBT高频特性模拟分析

Oxidation driven Ge atoms diffuse from the SiGe film to the top silicon layer .

氧化将会促使SiGe薄膜中的Ge原子扩散到SOI材料的顶层硅中.

A high-frequency and small-signal equivalent circuit of SiGe HBT is presented in this paper .

给出了fT为15GHz的SiGeHBT器件的高频小信号等效电路模型；